SQJB90EP www.vishay.com vishay siliconix s16-1733-rev. a, 29-aug-16 1 document number: 75045 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive dual n-channel 80 v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? aec-q101 qualified ? 100 % r g and uis tested ? material categorization: for definitions of co mpliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" square pcb (fr4 material). d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8l is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. e. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. product summary v ds (v) 80 r ds(on) ( ? ) at v gs = 10 v 0.0215 i d (a) per leg 30 configuration dual package powerpak so-8l powerpak ? s o-8l dual top view 1 6.15 mm 5.13 m m 1 6.15 m m 5 .13 m m bottom view 2 g 1 3 s 2 4 g 2 1 s 1 d 2 d 1 n-channel mosfet d 1 g 1 s 1 n-channel mosfet d 2 g 2 s 2 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 80 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d 30 a t c = 125 c 18 continuous source curre nt (diode conduction) a i s 30 pulsed drain current b i dm 80 single pulse avalanche current l = 0.1 mh i as 22 single pulse avalanche energy e as 24 mj maximum power dissipation b t c = 25 c p d 48 w t c = 125 c 16 operating junction and storage temperature range t j , t stg -55 to +175 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 85 c/w junction-to-case (drain) r thjc 3.1
SQJB90EP www.vishay.com vishay siliconix s16-1733-rev. a, 29-aug-16 2 document number: 75045 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test cond itions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 80 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 3.0 3.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 80 v - - 1 a v gs = 0 v v ds = 80 v, t j = 125 c - - 50 v gs = 0 v v ds = 80 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds ? 5 v 25 - - a drain-source on-s tate resistance a r ds(on) v gs = 10 v i d = 10 a - 0.0179 0.0215 ? v gs = 10 v i d = 10 a, t j = 125 c - - 0.0353 v gs = 10 v i d = 10 a, t j = 175 c - - 0.0439 forward transconductance b g fs v ds = 15 v, i d = 10 a - 24 - s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 875 1200 pf output capacitance c oss - 445 600 reverse transfer capacitance c rss -2535 total gate charge c q g v gs = 10 v v ds = 40 v, i d = 1.5 a -1425 nc gate-source charge c q gs -4- gate-drain charge c q gd -3- gate resistance r g f = 1 mhz 0.18 0.41 0.65 ? turn-on delay time c t d(on) v dd = 40 v, r l = 26.7 ? i d ? 1.5 a, v gen = 10 v, r g = 1 ? -1325 ns rise time c t r -310 turn-off delay time c t d(off) -2140 fall time c t f -2240 source-drain diode ratings and characteristics b pulsed current a i sm --80a forward voltage v sd i f = 10 a, v gs = 0 v - 0.86 1.2 v
SQJB90EP www.vishay.com vishay siliconix s16-1733-rev. a, 29-aug-16 3 document number: 75045 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 10 100 1000 10000 0 17 34 51 68 85 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 7 v v gs = 6 v v gs = 5 v v gs = 4 v 10 100 1000 10000 0 10 20 30 40 50 0 6 12 18 24 30 axis title 1st line 2nd line 2nd line g fs - transconductance (s) i d - drain current (a) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 300 600 900 1200 1500 0 1632486480 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0 13 26 39 52 65 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0.000 0.015 0.030 0.045 0.060 0.075 0 1632486480 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 10 v 10 100 1000 10000 0 2 4 6 8 10 03691215 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line i d = 1.5 a v ds = 40 v
SQJB90EP www.vishay.com vishay siliconix s16-1733-rev. a, 29-aug-16 4 document number: 75045 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diode forward voltage threshold voltage drain source breakdown vs . junction temperature 10 100 1000 10000 0.5 0.9 1.3 1.7 2.1 2.5 -50-25 0 255075100125150175 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 5 a v gs = 10 v 10 100 1000 10000 0.00 0.02 0.04 0.06 0.08 0.10 0246810 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 150 c 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 -1.5 -1.1 -0.7 -0.3 0.1 0.5 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line v gs(th) variance (v) t j - temperature (c) 2nd line i d = 5 ma i d = 250 a 10 100 1000 10000 85 89 93 97 101 105 -50-25 0 255075100125150175 axis title 1st line 2nd line 2nd line v ds - drain-to-source voltage (v) t j - junction temperature (c) 2nd line i d = 1 ma
SQJB90EP www.vishay.com vishay siliconix s16-1733-rev. a, 29-aug-16 5 document number: 75045 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 10 100 1000 10000 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs > minimum v gs at which r ds(on) is specified i dm limited limited by r ds(on) (1) t c = 25 c single pulse bvdss limited 100 ms, 1 s, 10 s, dc 10 ms 1 ms 100 s i d limited 10 -3 10 -2 1 1 0 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z th ja (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
SQJB90EP www.vishay.com vishay siliconix s16-1733-rev. a, 29-aug-16 6 document number: 75045 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are deve loped from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062", double sided with 2 oz . copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75045 . 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 axis title 1st line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2
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